ds30424 rev. 1 - 2 1 of 3 ddc (lo-r1) u www.diodes.com diodes incorporated epitaxial planar die construction complementary pnp types available (dda) built-in biasing resistors lead-free device features maximum ratings @ t a = 25 c unless otherwise specified a m j l d b c h k g f nxx ym nxx ym mechanical data case: sot-363, molded plastic moisture sensitivity: level 1 per j-std-020a case material - ul flammability rating 94v-0 terminals: finish - matte tin solderable per mil-std-202, method 208 terminal connections: see diagram marking: date code and marking code (see diagrams & page 2) weight: 0.006 grams (approx.) ordering information (see page 2) t c u d o r p w e n r 1 r 1 r 2 r 2 r 1 r 1 r 1 , r 2 r 1 only schematic diagram ddc (lo-r1) u npn pre-biased small signal sot-363 dual surface mount transistor sot-363 dim min max a 0.10 0.30 b 1.15 1.35 c 2.00 2.20 d 0.65 nominal f 0.30 0.40 h 1.80 2.20 j 0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.25 0 8 all dimensions in mm p/n r1 (nom) r2 (nom) marking ddc122lu ddc142ju DDC122TU ddc142tu 0.22k 0.47k 0.22k 0.47k 10k 10k open open n81 n82 n83 n84 characteristic symbol value unit supply voltage v cc 50 v input voltage ddc122lu ddc142ju v in -5 to +6 -5 to +6 v input voltage DDC122TU ddc142tu v ebo (max) 5v output current all i c 100 ma power dissipation (note 3) p d 200 mw thermal resistance, junction to ambient air (note 3) r ja 625 c/w operating and storage and temperature range t j ,t stg -55 to +150 c note: 1. if lead-bearing terminal plating is required, please contact your diodes inc. sales representative for availabilit y and minimum order details. 2. mounted on fr4 pc board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf. 3. 150mw per element must not be exceeded.
ds30424 rev. 1 - 2 2 of 3 ddc (lo-r1) u www.diodes.com electrical characteristics r1, r2 types @ t a = 25 c unless otherwise specified t c u d o r p w e n * transistor - for reference only characteristic symbol min typ max unit test condition input voltage ddc122lu ddc142ju v l(off) 0.3 0.3 v v cc = 5v, i o = 100 a ddc122lu ddc142ju v l(on) 2.0 2.0 v v o = 0.3v, i o = 20ma v o = 0.3v, i o = 20ma output voltage v o(on) 0.3v v i o /i l = 5ma/0.25ma input current ddc122lu ddc142ju i l 28 13 ma v i = 5v output current i o(off) 0.5 a v cc = 50v, v i = 0v dc current gain ddc122lu ddc142ju g l 56 56 v o = 5v, i o = 10ma gain-bandwidth product* f t 200 mhz v ce = 10v, i e = 5ma, f = 100mhz electrical characteristics r1-only @ t a = 25 c unless otherwise specified characteristic symbol min typ max unit test condition collector-base breakdown voltage bv cbo 50 v i c = 50 a collector-emitter breakdown voltage bv ceo 40 v i c = 1ma emitter-base breakdown voltage DDC122TU ddc142tu bv ebo 5 v i e = 50 a i e = 50 a collector cutoff current i cbo 0.5 a v cb = 50v emitter cutoff current DDC122TU ddc142tu i ebo 0.5 0.5 a v eb = 4v collector-emitter saturation voltage v ce(sat) 0.3 v i c = 5ma, i b = 0.25ma dc current transfer ratio DDC122TU ddc142tu h fe 100 100 250 250 600 600 i c = 1ma, v ce = 5v gain-bandwidth product* f t 200 mhz v ce = 10v, i e = -5ma, f = 100mhz * transistor - for reference only ordering information (note 4) device packaging shipping ddc122lu-7 sot-363 3000/tape & reel ddc142ju-7 sot-363 3000/tape & reel DDC122TU-7 sot-363 3000/tape & reel ddc142tu-7 sot-363 3000/tape & reel notes: 1. if lead-bearing terminal plating is required, please contact your diodes inc. sales representative for availabilit y and minimum order details. 4. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. marking information nxx ym nxx ym nxx = product type marking code see sheet 1 diagrams ym = date code marking y = year ex: n = 2002 m = month ex: 9 = september date code key year 2002 2003 2004 2005 2006 2007 2008 2009 code nprst uvw month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd
ds30424 rev. 1 - 2 3 of 3 ddc (lo-r1) u www.diodes.com t c u d o r p w e n -50 050100150 2 5 0 200 150 50 100 0 t , ambient temperature ( c) a fi g .1 powerderatin g curve p , power dissipation (mw) d (150mw per element must not be exceeded).
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